Volume 18, Issue 49 (No.3&4-صفحات انگلیسی از 123 تا 140 2006)
2006, 18(49): 471-479 |
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Porous Silicon as oxygen sensor. Journal title 2006; 18 (49) :471-479
URL: http://jsci.khu.ac.ir/article-1-1170-en.html
URL: http://jsci.khu.ac.ir/article-1-1170-en.html
Abstract: (5132 Views)
In this research work, porous silicon is made by using chemical method. Depending upon H.F density, the amount of porosity of silicon will change. Then an ohmic aluminium contact and gold contact on the porous side of silicon is made. I-V characteristics were plotted for different devices. Experimental results show that these devices are very sensitive with oxygen, so we can use these devices as oxygen sensor.
Published: 2006/11/15
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