Showing 2 results for Thin Films
M. E. Azim Araghi, Ensieh Khalili Dermani,
Volume 13, Issue 2 (7-2013)
Abstract
In this research work nano porous silicon layers with different porosity were prepared by using electrochemical etching. Surface morphology and size of pores were investigated by scanning electron microscopy (SEM).TiO2 thin films with EBPVD method have been deposited on the surface of PSi layers. The influence of anodization conditions such as anodization time interval and current density on electrical properties and surface morphology of sandwich devices were carried out using I-V measurement .The results showed that, electrical properties were influenced by changes of current density and anodization time interval. We also investigated the AC electrical conductivity of Al/TiO2/PSi/Al sandwich devices over the range of frequency 102 to 105 Hz and temperature range 300 to 378 K. It is known that, over the range of frequency < 103Hz the band theory and over the range of frequency > 103Hz hopping mechanism is applicable in explaining the conductivity of TiO2/PSi thin films nano structures with aluminum electrodes.
Me Azimaraghi, Sn Riazi, Salar Porteamor,
Volume 14, Issue 3 (10-2014)
Abstract
In the present study, we investigate DC conduction mechanism of electron beam evaporated Bromoaluminium phthalocyanine (BrAlPc) thin films using aluminum and gold electrodes. The current-voltage characteristics of sandwich type device are evaluated for the temperature range 298-413K under dark conditions. It is observed that the current passing through the device is increased by increasing temperature at the same voltage in the range of 0-6v. It is found that at lower voltages about 0 to 2v, the current–voltage characteristics demonstrate Ohmic behavior, while the space charge limited current (SCLC) becomes apparent at higher voltages about 2 to 6v, which is restricted by single discrete trapping level. We obtained more than one linear region in the temperature dependence of electrical conductivity. Also, the values of charge carrier mobility and the activation energy of device are evaluated.
