Volume 18, Issue 49 (11-2006)
Abstract
In this research work, porous silicon is made by using chemical method. Depending upon H.F density, the amount of porosity of silicon will change. Then an ohmic aluminium contact and gold contact on the porous side of silicon is made. I-V characteristics were plotted for different devices. Experimental results show that these devices are very sensitive with oxygen, so we can use these devices as oxygen sensor.
